to-25 2 -2l plastic-encapsulate transistors 2sd1815 transistor (npn) features z low c ollector-to- e mitter s aturation v oltage z excllent l inearity of h fe z high f t z fast s witching t ime maximum ratings ( t a =2 5 unless otherwise note ) symbol parameter value unit v cbo collector-base voltage 120 v v ceo collector-emitter voltage 100 v v ebo emitter-base voltage 6 v i c collector current -continuous 3 a p c collector power dissipation 1 w t j junction temperature 150 t stg storage temperature -55 to +150 electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions m in t yp max unit collector-base breakdown voltage v (br)cbo i c =10 a, i e =0 120 v collector-emitter breakdown voltage v (br)ceo i c =1ma, i b =0 100 v emitter-base breakdown voltage v (br)ebo i e =10 a, i c =0 6 v collector cut-off current i cbo v cb =100v, i e =0 1 a emitter cut-off current i ebo v eb =4v, i c =0 1 a h fe(1) v ce =5v, i c =500ma 70 400 dc current gain h fe(2) v ce =5v, i c =2a 40 collector-emitter saturation voltage v ce(sat) i c =1.5a, i b =150ma 0.4 v base -emitter saturation voltage v be(sat) i c =1.5a, i b =150ma 1.2 v transition frequency f t v ce =10v, i c =500ma 180 mhz collector output capacitance c ob v cb =10v, i e =0, f=1mhz 25 pf turn-on time t on 100 ns storage time t s 900 ns fall time t f v cc =50v,i c =1.5a, i b1 =-i b2 =-0.15a 50 ns classification of h fe(1) rank q r s t range 70-140 100-200 140-280 200-400 to-25 2 -2l 1. base 2. collector 3. emitter 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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